Back to results
US 2003/0189244 A1Published application
Semiconductor device with fuse box and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorHyun-Chul Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a semiconductor substrate having a bonding pad region; and a bonding pad and a fuse box formed in the bonding pad region. Thus, the chip size can be reduced and the manufacturing yield can be increased.
Claims15
A semiconductor device, comprising:
- a semiconductor substrate having a bonding pad region;
- and
- a bonding pad and a fuse box formed in the bonding pad region.
A semiconductor device, comprising:
- a plurality of fuses formed in a bonding pad region of a semiconductor substrate;
- an insulation film overlying the plurality of fuses;
- a bonding pad overlying the insulation film in the bonding pad region;
- and
- a passivation layer overlying the resulting structure and including a bonding pad opening to expose the bonding pad, wherein the bonding pad opening includes a fuse box to expose a portion of the insulation film covering the fuses.
2 more elements
A semiconductor device, comprising:
- a plurality of fuses formed in a bonding pad region of a semiconductor substrate;
- a first interlayer insulating film overlying the plurality of fuses;
- a first metal line and metal patterns formed on the first interlayer insulating film in the bonding pad region;
- a second interlayer insulating film overlying the first metal line;
- a second metal line formed on the second interlayer insulating film over the first metal line;
- a passivation layer overlying the resulting structure and including a bonding pad opening to expose the second metal line;
- and
- a fuse box formed within the bonding pad opening to expose the first interlayer insulating film over the fuses.
5 more elements
A method for manufacturing a semiconductor device, the method comprising:
- forming a plurality of fuses in a bonding pad region of a semiconductor substrate;
- forming a first interlayer insulating film overlying the plurality of fuses;
- forming an etching stop layer on the first interlayer insulating film in the bonding pad region;
- forming a second interlayer insulating film on the etching stop layer;
- forming metal/patterns and a first metal line on the second interlayer insulating film in the bonding pad region;
- forming a third interlayer insulating film on the metal patterns and the first metal line;
- forming a passivation layer overlying the resulting structure;
- forming a bonding pad opening in the passivation layer to expose the second metal line;
- and
- forming a fuse box within the bonding pad opening to expose of the first interlayer insulating film over the fuses.
7 more elements
A method for forming a semiconductor device, the method comprising:
- forming a plurality of fuses formed in a bonding pad region of a semiconductor substrate;
- forming an insulation film overlying the plurality of fuses;
- forming a bonding pad overlying the insulation film in the bonding pad region;
- and
- forming a passivation layer overlying the insulation film and including a bonding pad opening therein to expose the bonding pad, wherein the bonding pad opening includes a fuse box to expose a portion of the insulation film covering the fuses.
2 more elements
Dependencies are inferred from the claim text.