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US 2003/0189232 A1Published application
Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
AssigneeApplied Materials, Inc.
InventorsKam Law, Quan Yuan Shang, William Reid Harshbarger, Dan Maydan
Life of this patent
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Abstract
A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.
Claims78
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate having source regions and drain regions formed over gate regions;
- and
- depositing a silicon-containing passivation layer on the source regions and the drain regions using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reactant gas.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate having gate regions formed over source regions and drain regions;
- and
- depositing a silicon-containing passivation layer on the gate regions using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to on of either a silicon-containing precursor and a reactant gas.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a silicon-containing passivation layer on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reactant gas.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing a silicon-containing passivation layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in the process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reactant gas, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and a period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor each have the same duration.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing a silicon-containing passivation layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reactant gas, and wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and a period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor has a different duration.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- depositing a silicon-containing passivation layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reactant gas, wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and a period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor each have the same duration, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and the period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor each have the same duration during each deposition cycle of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising the steps of:
- providing a substrate;
- and
- depositing a silicon-containing passivation layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reactant gas, wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and a period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor each have the same duration, and wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and the period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor has a different duration during one or more deposition cycles of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a silicon-containing passivation on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reactant gas, wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and a period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor has a different duration, and wherein the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and the period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor each have the same duration during each deposition cycle of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a silicon-containing passivation layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a silicon-containing precursor and a reactant gas, wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, a period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and a period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor has a different duration, and wherein at least one of the period of exposure to the silicon-containing precursor, the period of exposure to the reactant gas, the period of flow of the inert gas between the period of exposure to the silicon-containing precursor and the period of exposure to the reactant gas, and the period of flow of the inert gas between the period of exposure to the reactant gas and the period of exposure to the silicon-containing precursor has a different duration during one or more deposition cycles of the cyclical deposition process.
A method of forming a silicon-containing passivation layer on a substrate, comprising:
- providing a substrate;
- and
- depositing a silicon-containing passivation layer on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reactant gas.
A transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- a substrate a silicon-containing passivation layer formed thereon, wherein the silicon-containing passivation layer is formed using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a silicon-containing precursor and a reactant gas.
Dependencies are inferred from the claim text.