Semiconductor-on-insulator constructions; and methods of forming semiconductor-on-insulator constructions
AssigneeMicrong Technology, Inc.
InventorChandra Mouli
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Abstract
The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the insulative mass. The material comprises one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.
Claims88
A method of forming a semiconductor-on-insulator construction, comprising:
- providing a substrate comprising a semiconductor-containing layer over an insulative mass, the insulative mass comprising silicon dioxide;
- and
- forming a band of material within the insulative mass, the material comprising one or more of nitrogen, argon, fluorine, bromine, chlorine, iodine and germanium.
A method of forming a semiconductor-on-insulator construction, comprising:
- providing a substrate having an insulative mass supported thereby and having a semiconductor-containing layer over the insulative mass, the insulative mass comprising silicon dioxide;
- and
- providing nitrogen within the insulative mass.
A method of forming a transistor device associated with semiconductor-on-insulator construction, comprising:
- providing a substrate comprising a semiconductor-containing layer over an insulative mass, the insulative mass comprising silicon dioxide;
- forming a band of material within the insulative mass, the material comprising one or more of nitrogen, argon, fluorine, bromine, chlorine, iodine and germanium;
- forming a transistor gate proximate the semiconductor-containing layer, the transistor gate defining a channel region within the semiconductor-containing layer;
- and
- forming a pair of source/drain regions within the semiconductor-containing layer and separated from one another by the channel region.
A semiconductor-on-insulator construction, comprising:
- a substrate comprising a semiconductor-containing layer over an insulative mass, the insulative mass comprising silicon dioxide;
- and
- a band of material within the insulative mass, the material comprising one or more of nitrogen, argon, fluorine, bromine, chlorine, iodine and germanium.
A silicon-on-insulator construction, comprising:
- a substrate having an insulative mass supported thereby, the insulative mass comprising silicon dioxide;
- a band of nitrogen within the insulative mass;
- and
- a silicon-containing layer over the insulative mass.
A semiconductor construction, comprising:
- a substrate comprising a silicon-containing layer over an insulative mass, the insulative mass comprising silicon dioxide;
- a band of barrier within the insulative mass, the material being selected from the group consisting of nitrogen, argon, fluorine, bromine, chlorine, iodine, germanium, and mixtures thereof;
- a transistor gate proximate the silicon-containing layer, the transistor gate defining a channel region within the silicon-containing layer;
- and
- a pair of source/drain regions within the silicon-containing layer and separated from one another by the channel region.
Dependencies are inferred from the claim text.