Method of forming a semiconductor array of floating gate memory cells and strap regions

An array of electrically programmable and erasable memory devices comprising:

• a substrate of semiconductor material having a first conductivity type;
• an array of memory cells formed on the substrate;
• a first plurality of parallel spaced apart lines of conductive material formed over the substrate and electrically coupled to the memory cells;
• a second plurality of parallel spaced apart lines of conductive material formed over the substrate and electrically connected to the memory cells;
• and
• a plurality of strap regions each formed on the substrate and disposed in an interlaced fashion between adjacent portions of the memory cell array, each of the strap regions including:
• first strap cells through which the first plurality of conductive material lines traverse, wherein the first plurality of conductive material lines completely traverse across the strap region,
• a first plurality of conductive metal contacts each of which is connected to one of the first plurality of conductive material lines in one of the first strap cells,
• second strap cells in which the second plurality of conductive material lines terminate without completely traversing across the strap region, and
• a second plurality of conductive metal contacts each of which is connected to one of the second plurality of conductive material lines in one of the second strap cells.

A method of forming an array of memory devices, the method comprising the steps of:

• forming an array of memory cells on a semiconductor substrate having a first conductivity type;
• forming a first plurality of parallel spaced apart lines of conductive material over the substrate that are electrically coupled to the memory cells;
• forming a second plurality of parallel spaced apart lines of conductive material over the substrate and electrically connected to the memory cells;
• and
• forming a strap region on the substrate and adjacent to the memory cell array, the formation of the strap region including the steps of:
• forming first strap cells in the strap region through which the first plurality of conductive material lines traverse, wherein the first plurality of conductive material lines completely traverse across the strap region,
• forming a first plurality of conductive metal contacts each of which is connected to one of the first plurality of conductive material lines in one of the first strap cells,
• forming second strap cells in the strap region in which the second plurality of conductive material lines terminate without completely traversing across the strap region, and
• forming a second plurality of conductive metal contacts each of which is connected to one of the second plurality of conductive material lines in one of the second strap cells.

A method of forming an array of memory devices, the method comprising the steps of:

• forming an array of memory cells on a semiconductor substrate having a first conductivity type;
• forming a first plurality of parallel spaced apart lines of conductive material over the substrate that are electrically coupled to the memory cells;
• forming a second plurality of parallel spaced apart lines of conductive material over the substrate and electrically connected to the memory cells;
• and
• forming a plurality of strap regions on the substrate in an interlaced fashion between adjacent portions of the memory cell array, the formation of each of the strap regions including the steps of:
• forming first strap cells in the strap region through which the first plurality of conductive material lines traverse, wherein the first plurality of conductive material lines completely traverse across the strap regions,
• forming a first plurality of conductive metal contacts each of which is connected to one of the first plurality of conductive material lines in one of the first strap cells,
• forming second strap cells in the strap region in which the second plurality of conductive material lines terminate without completely traversing across the strap region, and
• forming a second plurality of conductive metal contacts each of which is connected to one of the second plurality of conductive material lines in one of the second strap cells.