Chemical-mechanical polishing composition for metal layers
AssigneeEverlight USA, Inc.
InventorsYen Heng Chen, Yaun-Shin Li
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Abstract
The present invention discloses a composition for chemical mechanical polishing of a metal layer at a high rate, which includes at least an oxidizing agent, a polishing promoter, an organic diproticic acid and deionized water. The polishing composition of the present invention can be applied alone or with an abrasive, and effectively improves the planarity of metal layers polished at high rates.
Claims23
A composition for chemical mechanical polishing of a metal layer at a high rate suitable for controlling planarity of a metal layer polished at a rate over 2000 Å/min in integrated circuit manufacturing;
- said composition comprising an oxidizing agent, a polishing promoter, an organic acid and deionized water, wherein said organic acid is an organic diprotic acid.
A composition for chemical mechanical polishing of a metal layer at a high rate suitable for controlling planarity of a metal layer polished at a rate over 4000 Å/min to less than 6% planarity percentage in integrated circuit manufacturing;
- said composition comprising an oxidizing agent, a polishing promoter, an organic acid and deionized water, wherein said organic acid is an organic diprotic acid.
Dependencies are inferred from the claim text.