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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsTakashi Nihonmatsu, Masahiko Yoshida, Yoshinori Sasaki, Masahito Saitoh, Toshiaki Takaku, Tadahiro Kato
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There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water, a method for processing a semiconductor wafer subjected to a chamfering process, a surface grinding process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, and a method for processing a semiconductor wafer subjected to a flattening process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, a back surface polishing process is performed after the acid etching as the mirror-polishing process, and then a front surface polishing process is performed. According to this, there can be provided a method for processing a semiconductor wafer to have good flatness, good surface roughness, and good condition on a back surface thereof.
A method for processing a semiconductor wafer that the wafer obtained by slicing a single crystal ingot is subjected to at least a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water.
A method for processing a semiconductor wafer that the wafer obtained by slicing a single crystal ingot is subjected to at least a chamfering process, a surface grinding process, an etching process, and a mirror-polishing process, wherein the surface grinding process is performed prior to the etching process, acid etching is performed after alkaline etching as the etching process, and the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water.
A method for processing a semiconductor wafer that the wafer obtained by slicing a single crystal ingot is subjected to at least a flattening process, an etching process, and a mirror-polishing process, wherein the flattening process is performed as a previous step of the etching process, acid etching is performed after alkaline etching as the etching process, the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water, and a back surface polishing process is performed as the mirror-polishing process after the acid etching, and then a front surface polishing process is performed.
A semiconductor wafer, which is chemically etched, wherein the maximum value of a pit depth is 4 μm or less, waviness is 0.05 μm or less, and glossiness is 20-70%.
A semiconductor wafer of which front surface is mirror-polished, wherein SFQRmax is 0.1 μm or less, the maximum value of a pit depth of the other surface, which is mirror-polished, is 4 μm or less, waviness is 0.05 μm or less, and glossiness is 20-70%.
Dependencies are inferred from the claim text.