US 2003/0171002 A1Published application

Method of manufacturing a semiconductor device and method of forming a film

AssigneeFujitsu Limited

InventorsShigeyoshi Umemiya, Kenji Maruyama

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Abstract

A semiconductor device manufacturing method includes the steps of (a) introducing a first substrate into a first CVD chamber; (b) raising the first substrate temperature to a predetermined value; (c) growing a film on the first substrate by supplying vapor phase material in a material line to the first chamber; (d) introducing a second substrate into a second CVD chamber; (e) raising the second substrate temperature to the predetermined value; and (f) growing a film on the second substrate by supplying the vapor phase material to the second chamber. Steps (c) and (f) supply the vapor phase material selectively to the first and second chambers, respectively. In step (f) after step (c), the chamber to which the vapor phase material is supplied is switched from the first chamber to the second chamber so that the pressure of the vapor phase material in the material line is kept substantially constant.

Claims26

Dependent claims

A method of manufacturing a semiconductor device, the method comprising the steps of:

(a) introducing a first processing substrate into a first CVD film-forming chamber;
(b) raising a temperature of the first processing substrate to a predetermined processing temperature in the first CVD film-forming chamber;
(c) growing a first film on the first processing substrate in the first CVD film-forming chamber by supplying vapor phase material in a material line to the first CVD film-forming chamber;
(d) introducing a second processing substrate into a second CVD film-forming chamber;
(e) raising a temperature of the second processing substrate to the predetermined processing temperature in the second CVD film-forming chamber;
and
(f) growing a second film on the second processing substrate in the second CVD film-forming chamber by supplying the vapor phase material in the material line to the second CVD film-forming chamber,
wherein:
said step (c) includes the step of supplying the vapor phase material in the material line selectively to the first CVD film-forming chamber;
said step (f) includes the step of supplying the vapor phase material in the material line selectively to the second CVD film-forming chamber;
and
said step (f) is performed after said step (c) by switching, from the first CVD film-forming chamber to the second CVD film-forming chamber, a chamber to which the vapor phase material in the material line is supplied so that a pressure of the vapor phase material in the material line is maintained at a substantially constant value.

9 more elements

A film-forming method using a gas supply source and first and second film-forming chambers connected thereto, the film-forming method placing first and second substrates inside the first and second film-forming chambers, respectively, and forming a thin film on a surface of each of the first and second substrates by introducing material gas for the thin films from the gas supply source into the first and second film-forming chambers while evacuating the first and second film-forming chambers, wherein:

a dummy film-forming chamber different from the first and second film-forming chambers is provided so as to be connected to the gas supply source;
and
at a time of completing the formation of the thin film on the first substrate in the first film-forming chamber while continuing the formation of the thin film on the second substrate in the second film-forming chamber, the dummy film-forming chamber is pre-evacuated so that the material gas equal in amount to the material gas introduced into the first film-forming chamber is introduced from the gas supply source into the pre-evacuated dummy film-forming chamber while the introduction of the material gas into the first-film forming chamber is suspended.

A film-forming apparatus comprising:

a first CVD film-forming chamber capable of, after a first processing substrate is introduced thereinto, raising a temperature of the first processing substrate to a predetermined processing temperature and forming a first film on the first processing substrate while supplying vapor phase material in a material line to the first CVD film-forming chamber;
and
a second CVD film-forming chamber capable of, after a second processing substrate is introduced thereinto, raising a temperature of the second processing substrate to the predetermined processing temperature and forming a second film on the second processing substrate while supplying the vapor phase material in the material line to the second CVD film-forming chamber,
wherein:
the vapor phase material in the material line is supplied selectively to the first film-forming chamber in growing the first film on the first processing substrate in the first film-forming chamber;
a chamber to which the vapor phase material in the material line is supplied is switched from the first film-forming chamber to the second film-forming chamber after the first film is formed on the first processing substrate in the first film-forming chamber in growing the second film on the second processing substrate in the second film-forming chamber;
and
the switching of the chamber to which the vapor phase material is supplied is performed so that a pressure of the vapor phase material in the material line is maintained at a substantially constant value.

5 more elements

Dependencies are inferred from the claim text.