Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure

A process for manufacturing a semiconductor substrate, comprising:

• the step of preparing a first silicon substrate which has a surface layer portion subjected to hydrogen, annealing;
• the separation-layer formation step of implanting ions of at least one element selected from the group consisting of hydrogen, nitrogen and rare gases, into said first silicon substrate from the side of said surface layer portion, thereby to form a separation layer;
• the step of bonding said first substrate and a second substrate to each other, thereby to form a multilayer structure;
• the step of heat-treating the first and second substrates at a first temperature while said multilayer structure is being formed or after said multilayer structure has been formed;
• the transfer step of separating said multilayer structure by utilizing said separation layer, thereby to transfer at least part of said surface layer portion onto said second substrate;
• and
• the step of heat-treating said surface layer portion transferred on said second substrate, at a second heat-treating temperature which is higher than the first heat-treating temperature.

A process for manufacturing a semiconductor thin film, comprising:

• the step of preparing a first silicon substrate which has a surface layer portion subjected to hydrogen annealing;
• the separation-layer formation step of implanting ions of at least one element selected from the group consisting of hydrogen, nitrogen and rare gases, into said first silicon substrate from the side of said surface layer portion, thereby to form a separation layer;
• and
• the separation step of separating at least part of said surface layer portion at said separation layer.

A process for manufacturing a semiconductor substrate, comprising:

• the step of heat-treating a silicon substrate in a reducing atmosphere which contain hydrogen;
• the separation-layer formation step of implanting ions of at least one element selected from the group consisting of hydrogen, nitrogen and rare gases, into said silicon substrate from the side of said surface layer portion, thereby to form a separation layer;
• the bonding step of bonding said silicon substrate and a second substrate to each other, thereby to form a multilayer structure;
• and
• the transfer step of separating said multilayer structure at said separation layer, thereby to transfer at least part of said surface layer portion onto said second substrate.