Simox substrate production process and simox substrate
AssigneeNippon Steel Corporation
InventorsAtsuki Matsumura, Tsutomi Sasaki, Koichi Kitahara
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Abstract
There is provided a process for fabrication of a SIMOX substrate wherein oxygen ions are implanted into a single crystal silicon substrate and then subjected to a high-temperature heat treatment to form a buried oxide layer and a surface single crystal silicon layer, wherein the single crystal silicon substrate used has a mean resistivity of 100 Ωcm or greater, and there is conducted a step of maintaining a temperature of from 800° C. to 1250° C. for a predetermined time in the final stage of the high-temperature heat treatment, as well as a SIMOX substrate wherein the mean resistivity of the substrate obtained by the process is 100 Ωcm or greater.
Claims7
A process for fabrication of a SIMOX substrate wherein oxygen ions are implanted into a single crystal silicon substrate and then subjected to a high-temperature heat treatment to form a buried oxide layer and a surface single crystal silicon layer, the process being characterized in that the single crystal silicon substrate used has a mean resistivity of at least 100 Ωcm and no greater than the intrinsic resistivity of the single crystal silicon, and there is conducted a step of maintaining a temperature of from 800° C. to 1250° C. for a predetermined time in the final stage of the high-temperature heat treatment.
Dependencies are inferred from the claim text.