Chemical vapor deposition method of forming titanium silicide comprising and other layers

A chemical vapor deposition method of forming titanium silicide comprising layers over at least two substrates, comprising:

• providing a first substrate within a chemical vapor deposition chamber;
• providing a reactive gas mixture comprising TiCl4 and a silane within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first substrate;
• after the first deposit, removing the first substrate from the chamber;
• after the first deposit, first cleaning the chamber with a hydrogen comprising gas;
• after the first cleaning, second cleaning the chamber with a chlorine comprising gas;
• after the second cleaning, third cleaning the chamber with a hydrogen comprising gas;
• and
• after the second cleaning and after the removing, chemical vapor depositing a titanium silicide comprising layer over a second substrate within the chamber using a reactive gas mixture comprising TiCl4 and a silane.

A chemical vapor deposition method of forming titanium silicide comprising layers over at least two substrates, comprising:

• providing a first substrate within a chemical vapor deposition chamber;
• providing a reactive gas mixture comprising TiCl4 and a silane within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first substrate;
• after the first deposit, removing the first substrate from the chamber;
• after the removing, first cleaning the chamber with a gas mixture comprising a hydrogen comprising gas and Ar;
• after the first cleaning, second cleaning the chamber with a gas mixture comprising a chlorine comprising gas and Ar;
• after the second cleaning, third cleaning the chamber with a gas mixture comprising a hydrogen comprising gas and Ar;
• and
• after the second cleaning, chemical vapor depositing a titanium silicide comprising layer over a second substrate within the chamber using a reactive gas mixture comprising TiCl4 and a silane.

A chemical vapor deposition method of forming a material over at least two substrates, comprising:

• providing a first substrate within a chemical vapor deposition chamber;
• providing a reactive gas mixture comprising at least a reactive precursor X and a reactive precursor Y which effectively react to first chemically vapor deposit a material C on the first substrate and which form a reaction by-product contaminant D on internal surfaces of the chamber, at least one of X and Y being reactive with D to form particles on subsequent substrates when subsequently depositing material C thereon using at least X and Y;
• after the first deposit, removing the first substrate from the chamber;
• after the first deposit, cleaning the chamber with a gas A effective to react with D;
• and
• after the cleaning and after the removing, chemical vapor depositing material C on a second substrate within the chamber using a reactive gas mixture comprising at least reactive precursor X and reactive precursor Y