High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications

A semiconductor wafer support apparatus, comprising:

• an electrostatic chuck having at least one electrode embedded therein;
• a pedestal support coupled to the electrostatic chuck;
• a shaft coupled to the pedestal;
• and
• at least one electrode cable respectively coupled to the at least one electrode and adapted for connection to provide DC and RF power to the at least one electrode, wherein the at least one electrode cable comprises:
• a wire bundle having a plurality of conductive strands, each conductive strand having a barrier coating and an anti-oxidation coating disposed thereon;
• a mica-based layer disposed around the wire bundle;
• and
• a fiberglass layer disposed around the mica-based layer.

A method of fabricating a high temperature resistant cable for transmitting DC and RF signals, comprising:

• coating a plurality of conductive strands with a barrier layer;
• coating the plurality of copper strands with the barrier layer with an anti-oxidation layer;
• forming the plurality of conductive strands having said layers into a wire bundle;
• wrapping a mica-based layer around a length of the wire bundle;
• and
• sheathing the mica-based layer in a fiberglass layer.