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US 2003/0166338 A1Published application
CMP slurry for metal and method for manufacturing metal line contact plug of semiconductor device using the same
OwnerKi Cheol Ahn, Pan Ki Kwon +2inventors
InventorsKi Cheol Ahn, Pan Ki Kwon, Jong Goo Jung, Sang Ick Lee
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Abstract
A chemical mechanical polishing (hereinafter, referred to as ‘CMP’) slurry for metal is disclosed, more specifically, method for manufacturing metal line contact plug of semiconductor device using an acidic CMP slurry for oxide film further comprising an oxidizer and a complexing agent, which polishes a metal, an oxide film and a nitride film at a similar speed, thereby easily separates a metal line contact plug.
Claims21
A chemical mechanical polishing (CMP) slurry for oxide films having a pH ranging from 2 to 7, and comprising an oxidizer and a complexing agent.
Dependencies are inferred from the claim text.