Raised extension structure for high performance cmos
AssigneeInfineon Technologies North America Corp.
InventorsDirk Vietzke, Thomas Schafbauer, James Brighten, Birgit Von Ehrenwall
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Abstract
In a process of fabricating on a substrate a CMOS semiconductor device having a gate electrode, a raised source, and a raised drain, the improvement comprising further incorporating a raised extension, comprising: providing a silicon surface on an insulator layer; proving a gate adjacent to an intended source/drain region; providing an offset spacer adjacent to the gate; growing a source/drain region by selective epitaxy; forming an extension with one or more dopants by ion implantation; and forming a hdd spacer.
Claims14
In a process of fabricating on a substrate a CMOS semiconductor device having a gate electrode, a raised source, and a raised drain, the improvement comprising further incorporating a raised extension, comprising:
- providing a silicon surface on an insulator layer;
- proving a gate adjacent to an intended source/drain region;
- providing an offset spacer adjacent to said gate;
- growing a source/drain region by selective epitaxy;
- forming an extension with one or more dopants by ion implantation;
- and
- forming a hdd spacer.
Dependencies are inferred from the claim text.