Photoresist composition and method of forming pattern using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYou-Kyoung Lee, Sung-Chul Kang, Jin-Ho Ju, Dong-Ki Lee, Seung-Uk Lee, Hoon Kang
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AssigneeSamsung Electronics Co., Ltd.
InventorsYou-Kyoung Lee, Sung-Chul Kang, Jin-Ho Ju, Dong-Ki Lee, Seung-Uk Lee, Hoon Kang
Estimating the term…
Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension.
A photoresist composition comprising about 5% to about 30% by weight of a polymer resin, about 2% to about 10% by weight of a photosensitive compound, about 0.1% to about 10% by weight of a sensitivity enhancing agent, about 0.1% to about 10% by weight of a sensitivity restraining agent, and about 60% to about 90% by weight of an organic solvent.
A method of forming a pattern comprising the steps of:
Dependencies are inferred from the claim text.