Method of forming refractory metal contact in an opening, and resulting structure
AssigneeInternational Business Machines Corporation
InventorsJonathan D. Chapple-Sokol, Randy W. Mann, William J. Murphy, Jed H. Rankin, Daniel S. Vanslette
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Abstract
A method of ensuring against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents interaction between any fluorine that is released during the refractory material deposition step from interacting with the underlying silicide.
Claims23
A method of filling an opening in an oxide layer, over a liner layer formed on a surface of a silicide substrate underlying both the oxide layer and the liner layer, comprising the steps of:
- forming a first continuous layer comprising silicon, on the oxide layer and on the liner layer;
- and
- forming a second layer, comprising a refractory material, on the first layer so as to cover the same and to also substantially fill the opening.
A multilayer structure, comprising:
- a silicide layer, having a first surface;
- an oxide layer, formed on the first surface and having a second surface, with an opening through the oxide layer defined by an opening wall extending from the second surface to the first surface;
- a liner layer, formed on the first surface at a bottom of the opening;
- a continuous silicon layer, formed to extend over the second surface, the opening surface and the liner layer;
- and
- a refractory material layer, formed on the silicon layer and substantially filling the opening.
Dependencies are inferred from the claim text.