Method of depositing a low k dielectric barrier film for copper damascene application
AssigneeApplied Materials, Inc.
InventorsChi-I Lang, Li-Qun Xia, Ping Xu, Louis Yang
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Abstract
A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NR1R2R3, wherein R1, R2, and R3 are selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.
Claims39
A method of depositing a low dielectric constant film on a substrate, comprising:
- providing a gas mixture to a deposition chamber, wherein the gas mixture comprises a silicon source, a carbon source, and NR1R2R3 into a chamber, wherein R1, R2, and R3 are selected from the group consisting of alkyl and phenyl groups;
- and reacting the gas mixture while applying radio frequency (RF) power to form a nitrogen-containing silicon carbide layer on the substrate in the chamber.
A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a layer deposition method, comprising:
- providing a gas mixture to the deposition chamber, wherein the gas mixture comprises a silicon source, a carbon source, and NR1R2R3, wherein R1,R2, and R3 are selected from the group consisting of alkyl and phenyl groups;
- and
- reacting the gas mixture while applying radio frequency (RF) power to form a nitrogen-containing silicon carbide layer on a substrate in the chamber.
A low dielectric constant film formed by a method comprising:
- providing a gas mixture to a deposition chamber, wherein the gas mixture comprises a silicon source, a carbon source, and NR1R2R3, wherein R1,R2, and R3 are selected from the group consisting of alkyl and phenyl groups;
- and
- reacting the gas mixture while applying radio frequency power to form a nitrogen-containing silicon carbide layer on a substrate in the deposition chamber.
Dependencies are inferred from the claim text.