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US 2003/0165412 A1Published application
Slurry for CMP, method of forming thereof and method of manufacturing semiconductor device including a CMP process
OwnerYukiteru Matsui, Gaku Minamihaba +2inventors
InventorsYukiteru Matsui, Gaku Minamihaba, Hiroyuki Yano, Dai Fukushima
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Abstract
A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified by thermocompression bonding.
Claims20
A slurry for CMP comprising:
- a liquid;
- and
- a plurality of polishing particles contained in the liquid, the polishing particle comprising at least one organic particle and at least one inorganic particle, and the organic particle and the inorganic particles being formed unified by thermocompression bonding.
A method of forming a slurry for CMP comprising:
- mixing a plurality of organic particles with a plurality of inorganic particles in powder state and with use of mechanofusion phenomenon, unifying at least one of the plurality of organic particles and at least one of the plurality of inorganic particles, to forme a plurality of polishing particles;
- and
- adding the polishing particles into a liquid.
A method of manufacturing a semiconductor device comprising:
- forming a conductive film above a substrate;
- and
- polishing the conductive film by using a slurry for CMP, the slurry including a plurality of polishing particles, the polishing particle comprising at least one organic particle and at least one inorganic particle, and the organic particle and the inorganic particles being unified by thermocompression bonding.
Dependencies are inferred from the claim text.