Semiconductor device and manufacturing method thereof
AssigneeNEC Electronics Corporation
InventorYoichiro Kurita
Life of this patent
Estimating the term…
Abstract
A bump is formed at a predetermined position on a surface of a semiconductor wafer and a sealing resin is formed so as to cover the surface and to make a surface of the bump exposed. Then, a reinforcing plate is bonded to the sealing resin and the exposed surface of the bump through an adhesive, and a rear portion of the semiconductor wafer is ground using a grind stone or removed by wet etching. Then, the rear surface of the thinned semiconductor wafer is covered with another sealing resin.
Claims12
A method of manufacturing a semiconductor device, comprising the steps of:
- forming at least one electrode at a specific position on a semiconductor wafer, said specific position being located on a surface of said semiconductor wafer;
- bonding a reinforcing plate to a surface of said at least one electrode while interposing a first resin layer between said surface of said semiconductor wafer and said reinforcing plate via an adhesive;
- thinning said semiconductor wafer by removing a portion of said semiconductor wafer;
- and
- covering an exposed surface of said semiconductor wafer with a second resin layer, said exposed surface being produced by removing said portion of said semiconductor wafer.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming at least one electrode at a specific position on a semiconductor wafer having an SOI (Silicon On Insulator) structure, said specific position being located on a surface of said semiconductor wafer, said SOI structure being defined such that an insulation layer is formed over a silicon substrate and an active silicon layer is formed over said insulation layer;
- forming a first resin layer between said at least one electrode on said surface of said semiconductor wafer;
- thinning said semiconductor wafer by removing said silicon substrate of said semiconductor wafer to expose said insulation layer;
- and
- covering an exposed surface of said insulation layer with a second resin layer.
A semiconductor device comprising:
- at least one electrode formed at a specific position on a semiconductor wafer, said specific position being located on a surface of said semiconductor wafer;
- a first resin layer interposed between said at least one electrode formed at a specific position on a semiconductor wafer and formed on said surface of said semiconductor wafer;
- and
- a second resin layer formed on an opposite surface of said semiconductor wafer, said opposite surface being produced by removing a portion of said semiconductor wafer, said portion being located opposite said surface of said semiconductor wafer.
Dependencies are inferred from the claim text.