Method for manufacturing semiconductor device using two orientation flats
OwnerYasushi Urakami, Shoichi Yamauchi +1inventors
InventorsYasushi Urakami, Shoichi Yamauchi, Toshio Sakakibara
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Abstract
A semiconductor substrate has a main surface oriented to {1 1 1} face, a first orientation flat formed on a peripheral portion of a semiconductor substrate and oriented to one of {1 1 1} face and {1 1 2} face perpendicular to the {1 1 0} face. It is easy to select (determine) {1 1 1} face for forming a trench in the semiconductor substrate based on the first orientation flat. In addition, the trench whose face is oriented to {1 1 1} face has few defects on its inner surface.
Claims20
A semiconductor substrate comprising:
- a main surface oriented to {1 1 0} face;
- a first orientation flat formed on a first peripheral portion of a semiconductor substrate, and oriented to one of {1 1 1} face and {1 1 2} face perpendicular to the {1 1 0} face.
A semiconductor substrate comprising:
- a main surface oriented to {1 1 0} face;
- a first orientation flat formed on a first peripheral portion of a semiconductor substrate, and oriented to one of {1 1 1} face and {1 1 2} face perpendicular to the {1 1 0} face;
- a second orientation flat formed on a second peripheral portion of a semiconductor substrate, and oriented to one of {1 1 1} face and {1 1 0} face and non-parallel with the first orientation flat
A method for manufacturing a semiconductor devise using a semiconductor substrate comprising:
- preparing a semiconductor substrate having a main surface oriented to {1 1 0} face, a first orientation flat formed on a first peripheral portion of a semiconductor substrate, and oriented to one of {1 1 1} face and {1 1 2} face perpendicular to the {1 1 0} face;
- selecting {1 1 1} face on the semiconductor substrate based on the first orientation flat;
- forming a trench in the semiconductor substrate by wet etching so that a longitudinal direction of the trench is defined along the {1 1 1} face.
A method for manufacturing a semiconductor devise using a semiconductor substrate comprising:
- preparing a semiconductor substrate having a main surface oriented to {1 1 0} face, a first orientation flat formed on a first peripheral portion of a semiconductor substrate, and oriented to one of {1 1 1} face and {1 1 2} face perpendicular to the {1 1 0} face;
- selecting {1 1 1} face on the semiconductor substrate based on the first orientation flat;
- forming a trench in the semiconductor substrate by dry etching so that a longitudinal direction of the trench is defined along the {1 1 1} face;
- removing a defect layer formed on a surface of the trench by wet etching.
Dependencies are inferred from the claim text.