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AssigneeLG. Philips LCD Co., Ltd.
InventorsChae Gee Sung, Jo Gyoo Chul, Makoto Sasaki, Kazuyuki Arai
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A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
A thin-film transistor substrate comprising a source line and a source terminal comprising one of indium tin zinc oxide and indium zinc oxide, wherein the source line is directly connected to the source terminal.
A thin-film transistor substrate comprising a gate line and a gate terminal comprising one of indium tin zinc oxide and indium zinc oxide, wherein the gate line is directly connected to the gate terminal.
A thin-film transistor substrate comprising drain electrodes constituting thin-film transistors for switching a plurality of pixel electrodes and pixel electrodes comprising one of indium tin zinc oxide and indium zinc oxide, wherein each of the drain electrodes is directly connected to each of the pixel electrodes.
A thin-film transistor substrate comprising:
Dependencies are inferred from the claim text.