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AssigneeEKC Technology, Inc.
InventorsRobert J. Small, Maria Peterson, Tuan Truong, Melvin Keith Carter, Lily Yao
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The present invention relates chemical mechanical planarization (“CMP”) of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4]nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.
A composition for chemical mechanical planarization comprising an aqueous oxidizer wherein said aqueous oxidizer comprises hydroxylamine and a material selected from the group consisting of hydroxylamine nitrate, hydroxylamine sulfate, ammonium salts and mixtures thereof.
A composition for chemical mechanical planarization comprising an aqueous oxidizer wherein said aqueous oxidizer comprises from approximately 0.3% to approximately 10% hydroxylamine and from approximately 0.1% to approximately 3% hydroxylamine nitrate.
A composition as in claim 24 wherein said abrasive comprises colloidal silica.
Dependencies are inferred from the claim text.