Method for applying adjusting marks on a semiconductor disk

Method of applying alignment marks to a semiconductor wafer, comprising the steps:

• production of an intricate structure (2, 3, 4) consisting of a non-metal in a large-area metal layer (6) in at least one area of the semiconductor wafer by forming depressions (3) in a surface area of the semiconductor wafer, lands (4) being formed between the depressions (3), and subsequent deposition of the metal layer (6) over the entire surface area;
• and
• planarizing the area of the semiconductor wafer having the large-area metal layer (6) by means of chemical-mechanical polishing, so that the intricate (2, 3, 4) structure consisting of non metal stands out from the large-area metal layer (6) after the polishing process;
• an additional intermediate layer (5) being applied between the semiconductor surface and the metal layer (6);
• the planarization being carried out in two stages by means of chemical-mechanical polishing, in the first stage the metal layer (6) being removed and being stopped on the intermediate layer (5) lying underneath and, in the second stage, the intermediate layer (5) being removed and stopped in the lands (4) lying underneath;
• and
• the first stage being designed in such a way that overpolishing of the metal surfaces (6) between the projecting lands (4) is carried out, the intermediate layer (5) on the projecting lands (4) also being partly removed at the same time, and the second stage being designed in such a way that intensive overpolishing of the intermediate layer (5) is carried out, in which erosion of the lands (4) lying underneath takes place, so that trenches result between the metal surfaces (6).