US 2003/0157774 A1Published application

Method for manufacturing semiconductor device

AssigneeHitachi, Ltd.

InventorsTatsuya Tominari, Takashi Hashimoto, Tomoko Jinbo, Tsutomu Udo

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Abstract

Provided is a manufacturing method of a semiconductor device, which comprises exposing a surface of a semiconductor substrate on which a heterocrystalline layer is to be grown inside of a second emitter opening portion of a hetero-junction bipolar transistor, removing water by preheat treatment in a reducing gas atmosphere, subjecting the substrate to second heat treatment in a reducing gas atmosphere at a temperature which is higher than the preheating treatment but does not adversely affect the impurity concentration distribution of another element on the semiconductor substrate, thereby removing an oxide film formed on the surface on which the heterocrystalline layer is to be grown, and then selectively causing epitaxial growth of the heterocrystalline layer on the thus cleaned surface in the second emitter opening portion. According to the present invention, reliability of a semiconductor device having a hetero-junction bipolar transistor can be improved.

Claims23

Dependent claims

A method of manufacturing a semiconductor device, comprising steps of:

(a) forming an isolation portion in a main surface of a semiconductor substrate;
(b) forming a first insulating film over an active region encompassed by the isolation portion of the semiconductor substrate;
(c) forming a second insulating film over the main surface of the semiconductor substrate after the step (b);
(d) depositing a base electrode formation film over the second insulating film;
(e) introducing an oxidation promoting impurity into an upper layer portion of the base electrode formation film;
(f) depositing a third insulating film over the base electrode formation film;
(g) removing a portion of the third insulating film and base electrode formation film to form a first emitter opening portion;
(h) oxidizing the semiconductor substrate to form a fourth insulating film over a side surface of the base electrode formation film and a corner portion thereof on a side in contact with the third insulating film, each inside of the first emitter opening portion;
(i) wet-etching the semiconductor substrate to remove the second insulating film through the first emitter opening portion, thereby forming a second emitter opening portion which is opened so that a side surface of the second insulating film is kept apart from the side surface of the base electrode formation film inside of the first emitter opening portion and from which a portion of the base electrode formation film is exposed;
(j) washing the resulting semiconductor substrate with hydrofluoric acid to remove the first insulating film exposed from the second emitter opening portion;
(k) heat treating the semiconductor substrate in a reducing gas atmosphere;
and
(1) selectively forming, by the epitaxial method, a heterocrystalline layer over the semiconductor substrate exposed from the second emitter opening portion.

10 more elements

A method of manufacturing a semiconductor device, comprising steps of:

(a) forming an isolation portion in a main surface of a semiconductor substrate;
(b) forming a first insulating film over an active region encompassed by the isolation portion of the semiconductor substrate;
(c) forming a second insulating film over the main surface of the semiconductor substrate after the step (b);
(d) depositing a base electrode formation film over the second insulating film;
(e) depositing a third insulating film over the base electrode formation film;
(f) removing a portion of the third insulating film and base electrode formation film to form a first emitter opening portion;
(g) oxidizing the semiconductor substrate to form a fourth insulating film over a side surface of the base electrode formation film inside of the first emitter opening portion;
(h) wet etching the semiconductor substrate to remove the second insulating film through the first emitter opening portion, thereby forming a second emitter opening portion which is opened so that a side surface of the second insulating film is kept apart from the side surface of the base electrode formation film inside of the first emitter opening portion and from which a portion of the base electrode formation film is exposed;
(i) washing the semiconductor substrate with hydrofluoric acid to remove the first insulating film exposed from the second emitter opening portion;
(j) subjecting the semiconductor substrate to first heat treatment at a first temperature in a reducing gas or non-oxidizing gas atmosphere;
(k) after the step (j), subjecting the semiconductor substrate to second heat treatment at a second temperature higher than the first temperature in a reducing gas atmosphere;
and
(1) after the step (k), selectively forming, by the epitaxial method, a heterocrystalline layer over the semiconductor substrate exposed from the second emitter opening portion.

10 more elements

A method of manufacturing a semiconductor device, comprising steps of:

(a) forming an isolation portion on a main surface of a semiconductor substrate;
(b) forming a first insulating film over an active region encompassed by the isolation portion of the semiconductor substrate;
(c) forming a second insulating film over the main surface of the semiconductor substrate after the step (b);
(d) depositing a base electrode formation film over the second insulating film;
(e) depositing a third insulating film over the base electrode formation film by chemical vapor deposition using plasma;
(f) removing a portion of the third insulating film and base electrode formation film to form a first emitter opening portion;
(g) oxidizing the semiconductor substrate to form a fourth insulating film over a side surface of the base electrode formation film inside of the first emitter opening portion;
(h) wet-etching the semiconductor substrate to remove the second insulating film through the first emitter opening portion, thereby forming a second emitter opening portion which is opened so that the side surface of the second insulating film is kept apart from the side surface of the base electrode formation film inside of the first emitter opening portion and from which a portion of the base electrode formation film is exposed;
(i) washing the semiconductor substrate with hydrofluoric acid to remove the first insulating film exposed from the second emitter opening portion;
(j) heat treating the semiconductor substrate in a reducing gas atmosphere;
and
(k) selectively forming, by an epitaxial method, a heterocrystalline layer over the semiconductor substrate exposed from the second emitter opening portion.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/347,221Filed 21 Jan 2003
Priority: JP 2002-04363020 Feb 2002
Published: 21 Aug 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 10/021
Manufacture or treatment: of heterojunction BJTs [HBT]
H10D 84/0109
Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00,…
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D
Inorganic electric semiconductor devices