Process for forming a storage electrode
OwnerKazutaka Manabeinventor
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Abstract
In a process for forming a storage electrode having a number of hemi-spherical grains formed on a surface thereof, after a number of hemi-spherical grains are formed on a surface of the storage electrode, phosphorus or arsenic is ion-implanted to the hemi-spherical grains under an ion implantation energy of 20 keV to 50 keV.
Claims20
A process for forming an electrode having a number of fine convexities formed on a surface thereof, wherein after a number of fine convexities are formed on a surface of an electrode, impurity is ion-implanted to said fine convexities under an ion implantation energy of 20 keV to 50 keV.
A process for forming an electrode having a number of fine convexities formed on a surface thereof, wherein after a number of fine convexities are formed on a surface of an electrode, phosphorus is ion-implanted to said fine convexities under an ion implantation energy of 20 keV to 60 keV.
Dependencies are inferred from the claim text.