Semiconductor device

A semiconductor device comprising insulating layer on one of whose surfaces a conductor area is established, while on the other surface thereof a semiconductor layer (1) is formed, having either an electron- or a hole-type conduction and provided with an ohmic contact, said layer (1) being coated with a layer (2) which is made of a metal and/or a semiconductor having the type of conduction opposite to that of the layer (1), said layer (2) forming a p-n junction and/or a Schotky barrier together with the layer (1) and having another ohmic contact;

• the doped profile and the thickness of the layer (1) should meet the condition of a complete depletion of the layer (1) or part of thereof in the majority charge carriers till the breakdown of the p-n junction or of the Schottky barrier upon applying an external bias voltage determined by the following inequality:
• 11 ( q / ε ⁢ ⁢ s ) · ∫ 0 d ⁡ ( x , z ) ⁢ Ni ⁡ ( x , y , z ) ⁢ y ⁢ ⅆ y - Uk < Ui
• where Ui—the breakdown voltage of the semiconductor layer (I)
• y—the coordinate counted off the metallurgical boundary of the p-n junction or Schottky barrier along the thickness of the layer;
• q—an elementary charge;
• d(x,z)—the thickness of the layer (1);
• Ni (x,y,z)—the doping profile in the layer (1)
• z, x—the coordinates on the surface of the layer (1);
• ∈s—the permeability of the layer (1);
• Uk—built-in junction potential.
• CHARACTERIZED in that the part of insulating layer contacting with semiconductor layer (1) being formed of high-ohmic semiconductor, the doping profile and the thickness of the layer (1) should meet the condition of a complete depletion of the layer (1) or part of thereof in the majority charge carriers till the breakdown of the p-n junction or of the Schottky barrier upon applying an external bias voltage determined by the following inequality:
• 12 ( ∫ 0 d ⁡ ( x , z ) ⁢ q / ε ⁢ ⁢ s ) ⁢ ⁢ Ni ⁡ ( x , h , z ) ⁢ h ⁢ ⁢ ⅆ h - Uk < Ui
• where Ui—the breakdown voltage of the semiconductor layer (I)
• h—the coordinate counted off the metallurgical boundary of the p-n junction or Schottky barrier along the thickness of the layer;
• q—an elementary charge;
• d(x,z)—the thickness of the layer (1);
• Ni (x,h,z)—the ion doping profile in the layer (1)
• z, x—the coordinates on the surface of the layer (1);
• ∈s—the permeability of the layer (1);
• Uk—built-in junction potential of the layer (1).