Integrated, active, moisture and oxygen getter layers
AssigneeInternational Business Machines Corporation
InventorsJohn A. Fitzsimmons, Stephen M. Gates, Vincent J. McGahay
Life of this patent
Estimating the term…
Abstract
An integrated circuit structure comprises a main dielectric layer having a top surface. A cavity having sidewalls is formed in the main dielectric layer. A liner is formed on the sidewalls of the cavity. A metal conductor such as copper is formed over the liner filling the lined cavity. A getter layer is formed in the structure which combines with oxygen/moisture to form inert reaction products thereof. The getter layer can be either a conductive material which can be included in the liner or a dielectric layer which can be formed on top of the main dielectric layer, buried in the main dielectric layer or below the main dielectric layer.
Claims21
An interconnect structure formed on a substrate comprising:
- a main dielectric layer having a top surface,
- a cavity formed in the dielectric layer having sidewalls formed therein,
- a liner formed on the sidewalls of the cavity forming a narrowed cavity,
- a metal conductor formed over the liner in the narrowed cavity, and
- a getter layer formed in the structure.
An interconnect integrated circuit structure comprising:
- a main dielectric material with a cavity formed therein lined with a barrier liner,
- a patterned metal conductor formed within the barrier liner in the cavity,
- the conductor having a top surface, and
- a mask patterning/Chemical Mechanical Polishing (CMP) stop layer formed atop the dielectric material.
Dependencies are inferred from the claim text.