Semiconductor device and manufacturing method

A semiconductor device in which a first field effect transistor having a first conductivity type channel and a second junction type field effect transistor having a second conductivity type channel are formed on the surface layer of a semiconductor substrate, characterized in that:

• said first field effect transistor has a first conductivity type channel layer and the source region and drain region formed on both ends of said channel layer,
• said second junction type field effect transistor has a second conductivity type channel layer separated from said first field effect transistor, the source region and drain region formed on both ends of said second conductivity type channel layer, and a composition in which a semiconductor layer being in contact with electrodes is not provided between the source region and drain region on said second conductivity type channel layer;
• a first wire connects one end of said second conductivity type channel layer to said first conductivity type drain region,
• a second wire connects the other end of said second conductivity type channel layer to a first power source.

A manufacturing method of a semiconductor device in which a first field effect transistor having a first conductivity type channel and a second field effect transistor having a second conductivity type channel are formed on the surface layer of a semiconductor substrate, comprising the processes of:

• forming a first field effect transistor having a first conductivity type channel, a first conductivity type source region and a first conductivity type drain region, onto the surface layer of said semiconductor substrate;
• forming a first conductivity type well region comprised of a gate region of said second field effect transistor, onto the surface layer of said semiconductor substrate separated from said first field effect transistor;
• forming a second conductivity type channel layer onto the surface layer of said first conductivity type well region;
• forming a first wire which connects one end of said second conductivity type channel layer to said first conductivity type drain region;
• forming a second wire which connects the other end of said second conductivity type channel layer to a first power source;
• and
• forming a third wire which connects said first conductivity type well region to a second power source having the same polarity as said first power source.