Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorYoichi Okita
Life of this patent
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Abstract
There is provided a semiconductor device having a ferroelectric capacitor, which comprises capacitor protection films for covering an upper surface and a side surface the ferroelectric capacitor that is formed on a first insulating film, a hole formed in a second insulating film, which is formed on the capacitor protection films and the first insulating film, to be positioned adjacently to the side surface of the ferroelectric capacitor via the capacitor protection films, and a conductive plug formed in the hole. Accordingly, alignment margin of the contact hole to be formed next to the capacitor can be reduced.
Claims20
A semiconductor device comprising:
- a first impurity diffusion region formed in a semiconductor substrate;
- a first insulating layer formed over the semiconductor substrate;
- a capacitor formed over the first insulating layer and having a lower electrode, a ferroelectric layer, and an upper electrode;
- an insulating capacitor protection layer made of material that is different from the first insulating layer, for covering an upper surface and a side surface of the capacitor;
- a second insulating layer formed over the capacitor protection layer and the first insulating layer, and made of material that is etched selectively from the capacitor protection layer;
- a first hole formed in the second insulating layer and positioned next to the side surface of the capacitor via the capacitor protection layer;
- and
- a first conductive plug formed in the first hole and connected electrically to the first impurity diffusion region.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first impurity diffusion region in a semiconductor substrate;
- forming a first insulating layer over the semiconductor substrate;
- forming a first conductive layer, a ferroelectric layer, and a second conductive layer over the first insulating layer;
- forming a capacitor by patterning the second conductive layer, the ferroelectric layer, and the first conductive layer using a first mask;
- forming an insulating capacitor protection layer made of material, which is different from the first insulating layer, on an upper surface and side surfaces of the capacitor;
- forming a second insulating layer made of material, that is etched selectively from the capacitor protection layer, over the capacitor protection layer and the first insulating layer;
- forming a first hole, which comes into contact with the capacitor protection layer on the side surface of the capacitor, in the second insulating layer;
- and
- forming a first conductive plug, which is connected electrically to the first impurity diffusion region, in the first hole.
Dependencies are inferred from the claim text.