Controllable semiconductor component
AssigneeEupec Europaische Gesellschaft fur Leistungshalbleiter GmbH & Co. KG
InventorsVeli Kartal, Hans-Joachim Schulze
Life of this patent
Estimating the term…
Abstract
The controllable semiconductor component (1) has a body (10) consisting of doped silicon. Two separate electrodes (3, 4) are connected to the silicon, between which an electric operating voltage (U) of the component (1) is applied. A control electrode (2), to which an electric control voltage (Us) for controlling the component (1) is applied, is insulated from the silicon of the body (10) by electric insulation material (100). According to the invention, the control electrode (2) has two control electrode sections (21, 22), separated from one another by a gap (23). Said semiconductor component can be used for IGBTs and MOS transistors.
Claims18
A controllable semiconductor component comprising:
- a body of doped semiconductor material,
- two electrodes that are separated from each other, each contacting the doped semiconductor material of the body, and whereby an electric operating voltage of the component can be applied between them, and
- a control electrode which is insulated from the semiconductor material of the body by electrically insulating material and to which an electric control voltage can be applied to control the component, whereby
- the control electrode has control electrode sections separated from one another by at least one gap.
A controllable semiconductor component comprising:
- a body of doped semiconductor material,
- two electrodes that are separated from each other, each contacting the doped semiconductor material of the body, whereby one of the two electrodes is a source electrode of the component and the other electrode is a drain electrode of the component,
- a control electrode which is insulated from the semiconductor material of the body by electrically insulating material, whereby the control electrode has control electrode sections separated from one another by at least one gap, whereby
- at least one control electrode section is connected across an electric resistor to a control terminal of the component.
A controllable semiconductor component comprising:
- a body of doped semiconductor material,
- two electrodes that are separated from each other, each contacting the doped semiconductor material of the body, and whereby an electric operating voltage of the component can be applied between them, and one of the two electrodes is a source electrode of the component and the other electrode is a drain electrode of the component,
- a control electrode which is insulated from the semiconductor material of the body by electrically insulating material and to which an electric control voltage can be applied to control the component, whereby the control electrode has control electrode sections separated from one another by at least one gap, and whereby
- at least one control electrode section is connected across an electric resistor to a control terminal of the component.
Dependencies are inferred from the claim text.