Method of producing a body of semiconductor material having a reduced mean free path length

A method of manufacturing a body of doped semiconductor material having a certain mean free path length for free charge carriers and a mean free path length for the free charge carriers which is smaller than the certain mean free path length, comprising the step:

• bonding by wafer bonding
• a crystal body of doped semiconductor material having the certain mean free path length for the free charge carriers, where this crystal body has at least locally a smaller mean free path length for the free charge carriers relative to the certain mean free path length,
• an additional crystal body of doped semiconductor material having a mean free path length for the free charge carriers which is larger than the mean free path length for the free charge carriers.

A body of doped semiconductor material comprising:

• a substrate crystal of doped semiconductor material having a certain mean free path length for free charge carriers and
• an epitaxial crystal layer of doped semiconductor material on the substrate crystal having at least locally a smaller mean free path length for the free charge carriers relative to the certain mean free path length.

The body of doped semiconductor material comprising:

• a crystal body of doped semiconductor material having a certain mean free path length for free charge carriers, whereby this body has at least locally a smaller mean free path length for the free charge carriers relative to the certain mean free path length,
• another crystal body of doped semiconductor material having a mean free path length for the free charge carriers which is greater than the smaller mean free path length for the free charge carriers of the one crystal body, and
• a bond produced by wafer bonding between the two crystal bodies.