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US 2003/0154906 A1Published application
Process for producing a highly doped silicon single crystal
AssigneeWacker Siltronic AG
InventorsMartin Weber, Erich Gmeilbauer, Robert Vorbuchner
Life of this patent
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Abstract
A process for producing a highly doped silicon single crystal by pulling the single crystal from a molten material which contains dopant and is held in a rotating crucible. Growth fluctuations during the pulling of the single crystal are limited to an amount of −0.3 mm/min to 0.3 mm/min.
Claims7
A process for producing a highly doped silicon single crystal comprising
- pulling the silicon single crystal from a molten material which contains dopant and is held in a rotating crucible;
- and
- limiting growth fluctuations during the pulling of the silicon single crystal to an amount of −0.3 mm/min to 0.3 mm/min.
Dependencies are inferred from the claim text.