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AssigneeShin-Etsu Handotai Co., Ltd.
InventorKazutoshi Mizushima
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Provided are a novel edge polished wafer in which a wafer peripheral sag is suppressed, a polishing cloth, a polishing apparatus and a polishing method for processing the wafer. The wafer is provided by controlling an over-polish width in edge polishing to 400 μm or less. Also, the polishing cloth has a multi-layer structure of at least two layers including a polishing fabric layer an Asker C hardness of which is 65 or higher and a sponge layer an Asker C hardness of which is 40 or lower, or a single layer structure of the polishing fabric layer. Further, the polishing apparatus and the polishing method are provided by edge polishing such that the wafer in rotation is put into contact with a rotary drum having the polishing cloth adhered thereon at a prescribed angle thereto while supplying polishing slurry to the contact portion of the polishing cloth.
An edge polished wafer, wherein an over-polish width generated by edge polishing is controlled to 400 μm or less.
A polishing cloth for edge polishing comprising a multi-layer structure of at least two layers including a polishing fabric layer and a sponge layer having a hardness lower than the polishing fabric layer being laminated, wherein an Asker C hardness of the polishing fabric layer is 65 or higher and an Asker C hardness of the sponge layer is 40 or lower.
An apparatus for edge polishing comprising a rotary drum with a polishing cloth adhered on an outer surface thereof and a wafer rotating device holding and rotating a wafer, wherein the wafer is edge polished such that the wafer in rotation is put into contact with the polishing cloth at a prescribed angle thereto while supplying polishing slurry to the contact portion of the polishing cloth, the polishing cloth being of a single layer structure including only a polishing fabric layer having an Asker C hardness of 65 or higher.
A method for edge polishing, wherein a chamfered portion of a wafer is edge polished while controlling an over-polish width to 400 μm or less.
Dependencies are inferred from the claim text.