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US 2003/0153193 A1Published application
Etching method
OwnerTakashi Fuse, Machiko Obiinventors
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Abstract
This invention is a plasma-etching method including: making into plasma a process gas including C2F4 gas that has been introduced into a processing container, maintaining a pressure around an object to be processed arranged in the processing container within a range of 45 to 75 mTorr, and etching an SiO2 film in the object to be processed through a resist-pattern arranged on the SiO2 film by using the plasma.
Claims13
A plasma-etching method comprising:
- making into plasma a process gas including C2F4 gas that has been introduced into a processing container,
- maintaining a pressure around an object to be processed arranged in the processing container within a range of 45 to 75 mTorr, and
- etching an SiO2 film in the object to be processed through a resist-pattern arranged on the SiO2 film by using the plasma.
A plasma-etching method comprising:
- making into plasma a process gas including O2 gas and C2F4 gas that has been introduced into a processing container, and
- etching an SiO2 film in an object to be processed arranged in the processing container through a resist-pattern arranged on the SiO2 film by using the plasma.
Dependencies are inferred from the claim text.