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US 2003/0153189 A1Published application
Low cost and low dishing slurry for polysilicon CMP
AssigneeApplied Materials, Inc.
InventorsSen-Hou Ko, Kevin H. Song
Life of this patent
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Abstract
Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mechanical planarization of substrates to remove polysilicon.
Claims35
A method of processing a substrate, comprising:
- polishing a substrate having a polysilicon layer disposed on an oxide layer, the oxide layer forming fields and trenches in the substrate, with a polishing composition comprising a polymeric surfactant and an abrasive selected from the group consisting of alumina and ceria.
A composition for polysilicon chemical mechanical polishing, comprising a polymeric surfactant and an abrasive selected from the group consisting of alumina and ceria.
Dependencies are inferred from the claim text.