Method to fabricate a single gate with dual work-functions
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsChew Hoe Ang, Eng Hua Lim, Randall Cher Liang Cha, Jia Zhen Zheng, Elgin Quek, Mei Sheng Zhou, Daniel Yen
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Abstract
A method for forming a single gate having a dual work-function is described. A gate electrode is formed overlying a gate dielectric layer on a substrate. Sidewalls of the gate electrode are selectively doped whereby the doped sidewalls have a first work-function and whereby a central portion of the gate electrode not doped has a second work-function to complete formation of a single gate having multiple work-functions in the fabrication of integrated circuits.
Claims31
A method of forming a single gate having multiple work-functions in the fabrication of integrated circuits comprising:
- forming a gate electrode overlying a gate dielectric layer on a substrate;
- and
- selectively doping sidewalls of said gate electrode whereby said doped sidewalls have a first work-function and whereby a central portion of said gate electrode not doped has a second work-function to complete formation of a single gate having multiple work-functions in the fabrication of integrated circuits.
A method of forming a single gate having multiple work-functions in the fabrication of integrated circuits comprising:
- forming a gate electrode overlying a gate dielectric layer on a substrate;
- and
- selectively doping sidewalls of said gate electrode using plasma enhanced ion doping whereby said doped sidewalls have a first work-function and whereby a central portion of said gate electrode not doped has a second work-function to complete formation of a single gate having multiple work-functions in the fabrication of integrated circuits.
A method of forming a single gate having multiple work-functions in the fabrication of integrated circuits comprising:
- forming a gate electrode overlying a gate dielectric layer on a substrate;
- selectively doping sidewalls of said gate electrode using plasma enhanced ion doping wherein said substrate is not biased whereby said doped sidewalls have a first work-function and whereby a central portion of said gate electrode not doped has a second work-function;
- and
- annealing said substrate to drive-in said dopants to complete formation of a single gate having multiple work-functions in the fabrication of integrated circuits.
Dependencies are inferred from the claim text.