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US 2003/0153126 A1Published application
Mask and method for patterning a semiconductor wafer
AssigneeInfineon Technologies North America Corp.
InventorsZhijian Lu, Shahid Butt, Alois Gutmann
Life of this patent
Estimating the term…
Abstract
A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.
Claims23
A method of manufacturing a semiconductor wafer patterning mask, the method comprising:
- providing a transparent substrate;
- forming an opaque material over the substrate;
- and
- forming a pattern in the opaque material, the pattern including a plurality of apertures and an assist line positioned between at least two of the apertures.
1 more element
A semiconductor wafer patterning mask, comprising:
- a transparent substrate;
- and
- an opaque material disposed over the substrate, the opaque material comprising a pattern including a plurality of apertures, wherein an assist line is coupled between at least two of the apertures.
Dependencies are inferred from the claim text.