Process for producing PZT films by chemical vapor deposition method

Abstract

This invention provides a process for producing PZT films by specifying a Ti material having a broad allowable temperature range for giving a predetermined film composition, easily thermally deposited from Ti(OiPr)2(dpm)2 even at a low substrate temperature of 450° C. or less in CVD where starting materials are fed in a solution vaporization system. Ti(OiPr)2(dibm)2 is used as a Ti source, and a solution of a combination of Pb(dpm)2-Zr(OiPr)(dpm)3-Ti(OiPr)2(dibm)2 in n-butyl acetate is vaporized and supplied at 200° C., and subjected to CVD at a substrate temperature of 420° C. at 1 Torr in an oxygen atmosphere, whereby excellent PZT films can be produced. Ti(OiPr)2(dibm)2 has a melting point of 105° C., a high solubility and a vapor pressure of 1 Torr/150° C. and does not react with Pb(dpm)2, and a solution thereof in n-butyl acetate has a pot life of 3 months.

Dependencies are inferred from the claim text.