Method to pattern small features by using a re-flowable hard mask

A method of forming small features, comprising the steps of:

• providing a substrate having a dielectric layer formed thereover;
• forming a spacing layer over the dielectric layer;
• the spacing layer having a thickness equal to the thickness of the small feature to be formed;
• forming a patterned, re-flowable masking layer over the spacing layer;
• the masking layer having a first opening with a width “L” of from about 1000 to 1800 Å;
• re-flowing the patterned, re-flowable masking layer to form a patterned, re-flowed masking layer having a re-flowed first opening with a lower width “1” of from about 200 to 800 Å;
• etching the spacing layer to the dielectric layer using the patterned, reflowed masking layer as a mask to form a second opening within the etched spacing layer having a width equal to the re-flowed first opening lower width “1”;
• removing the patterned, re-flowed masking layer;
• forming a small feature material within the second opening;
• removing any excess small feature material above the etched spacing layer;
• and
• removing the etched spacing layer to form the small feature comprised of the small feature material.

A method of forming small features, comprising the steps of:

• providing a substrate having a dielectric layer formed thereover;
• forming a spacing layer over the dielectric layer;
• the spacing layer having a thickness equal to the thickness of the small feature to be formed;
• forming a patterned, re-flowable masking layer over the spacing layer;
• the masking layer having a first opening with a width “L” of from about 1000 to 1800 Å;
• re-flowing the patterned, re-flowable masking layer to form a patterned, re-flowed masking layer having a re-flowed first opening with a lower width “1” of from about 200 to 800 Å;
• etching the spacing layer to the dielectric layer using the patterned, re-flowed masking layer as a mask to form a second opening within the etched spacing layer having a width equal to the re-flowed first opening lower width “1”;
• removing the patterned, re-flowed masking layer;
• forming a gate dielectric layer liner within the second opening
• forming a small feature material within the gate dielectric layer lined second opening;
• removing any excess small feature material and gate dielectric layer liner above the etched spacing layer;
• and
• removing the etched spacing layer to form the small feature comprised of the small feature material.