Radiation patterning tools, and methods of forming radiation patterning tools

A radiation patterning tool comprising:

• an array of feature patterns arranged in rows and columns;
• the feature patterns being configured rotate a phase of a wavelength of light as the light passes through the feature patterns;
• the feature patterns including a first type which imparts a first rotation to the phase, and a second type which imparts a second rotation to the phase, the second rotation being from about 170 degrees to about 190 degrees relative to the first rotation;
• the two types of feature patterns alternating with one another along the rows of the array;
• a plurality of first rims configured to impart the first rotation to the phase of the wavelength of light, the first rims being along edges of the second type of feature patterns;
• a plurality of second rims configured to impart the second rotation to the phase of the wavelength of light, the second rims being along edges of the first type of feature patterns;
• and
• the first and second rims being along columns of the array.

A method of forming a radiation patterning tool, comprising:

• providing a substrate;
• forming a feature pattern supported by the substrate;
• the feature pattern having a periphery;
• the feature patterned being configured to impart a first rotation in phase to a wavelength of light passing through the feature pattern;
• and
• forming a rim supported by the substrate;
• the rim being along a portion of the feature pattern periphery but not along an entirety of the feature pattern periphery;
• the rim being configured to impart a second rotation in phase to the wavelength of light when the wavelength passes through the rim;
• the second rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase.

A method of forming a radiation patterning tool, comprising:

• providing a substrate;
• forming a first feature pattern supported by the substrate;
• the first feature pattern having a periphery;
• the first feature patterned being configured to impart a first rotation in phase to a wavelength of light when the wavelength passes through the first feature pattern;
• forming a first rim supported by the substrate;
• the first rim being along a portion of the first feature pattern periphery but not along an entirety of the first feature pattern periphery;
• the first rim being configured to impart a second rotation in phase to the wavelength of light when the wavelength passes through the first rim;
• the second rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase;
• forming a second feature pattern supported by the substrate;
• the second feature pattern having a periphery;
• the second feature patterned being configured to impart a third rotation in phase to the wavelength of light passing through the second feature pattern;
• the third rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase;
• forming a second rim supported by the substrate;
• the second rim being along a portion of the second feature pattern periphery but not along an entirety of the second feature pattern periphery;
• the second rim being configured to impart a fourth rotation in phase to the wavelength of light when the wavelength passes through the second rim;
• the fourth rotation in phase being from about 170 degrees to about 190 degrees relative to the third rotation in phase.

A method of forming a radiation patterning tool, comprising:

• providing a substrate;
• the substrate comprising a mass transparent to a wavelength of light, and comprising a layer opaque to the wavelength of light over the mass;
• forming a layer of photoresist over the opaque material;
• a first portion of the photoresist being over a first defined feature pattern location, a second portion of the photoresist being over a first defined rim location;
• a third portion of the photoresist being over a second defined feature pattern location, and a fourth portion of the photoresist being over a second defined rim location;
• removing the first and fourth portions of the photoresist to expose segments of the layer in the first feature pattern location and second rim location;
• removing the exposed segments of the layer from the first feature pattern location and second rim location;
• after removing the exposed segments of the layer, implanting dopant into the substrate in the first feature pattern location and second rim location;
• after implanting the dopant, removing the second and third portions of the photoresist to expose segments of the layer in the first rim location and second feature pattern location;
• removing the exposed segments of the layer from the first rim location and second feature pattern location;
• and
• wherein:
• the doped region of the first feature pattern location is comprised by a first feature pattern configured to impart a first rotation in phase to the wavelength of light when the wavelength passes through the first feature pattern;
• the first rim location comprises a first rim along a portion of the first feature pattern and configured to impart a second rotation in phase to the wavelength of light when the wavelength passes through the first rim;
• the second rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase;
• the second feature pattern location comprises a second feature pattern configured to impart a third rotation in phase to the wavelength of light passing through the second feature pattern;
• the third rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase;
• and
• the doped region of the second rim location is comprised by a second rim along a portion of the second feature pattern and configured to impart a fourth rotation in phase to the wavelength of light when the wavelength passes through the second rim;
• the fourth rotation in phase being from about 170 degrees to about 190 degrees relative to the third rotation in phase.

A method of forming a radiation patterning tool, comprising:

• providing a substrate;
• the substrate comprising a mass transparent to a wavelength of light, and comprising a layer opaque to the wavelength of light over the mass;
• forming a layer of photoresist over the opaque material;
• a first portion of the photoresist being over a first defined feature pattern location, a second portion of the photoresist being over a first defined rim location;
• a third portion of the photoresist being over a second defined feature pattern location, and a fourth portion of the photoresist being over a second defined rim location;
• removing the first and third portions of the photoresist to expose segments of the layer in the first and second feature pattern locations;
• removing the exposed segments of the layer from the first and second feature pattern locations;
• after removing the exposed segments of the layer from the first and second feature pattern locations, removing the second and fourth portions of the photoresist to expose segments of the layer from the first and second rim locations,
• removing the exposed segments of the layer from the first and second rim locations;
• after removing the exposed segments of the layer from the first and second rim locations;
• forming a photoresist mass over the first feature pattern location and first rim location;
• after forming the photoresist mass, implanting dopant into the substrate in the second feature pattern location and second rim location;
• after implanting the dopant, removing the photoresist mass;
• and
• wherein:
• the first feature pattern location comprises a first feature pattern configured to impart a first rotation in phase to the wavelength of light when the wavelength passes through the first feature pattern;
• the first rim location comprises a first rim along a portion of the first feature pattern and configured to impart a second rotation in phase to the wavelength of light when the wavelength passes through the first rim;
• the second rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase;
• the doped second feature pattern location is comprised by a second feature pattern configured to impart a third rotation in phase to the wavelength of light passing through the second feature pattern;
• the third rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase;
• and
• the doped second rim location is comprised by a second rim along a portion of the second feature pattern and configured to impart a fourth rotation in phase to the wavelength of light when the wavelength passes through the second rim;
• the fourth rotation in phase being from about 170 degrees to about 190 degrees relative to the third rotation in phase.

A method of forming a radiation patterning tool, comprising:

• providing a substrate which includes a quartz base, a first phase shifting layer over the quartz base, a second phase shifting layer over the first phase shifting layer and having a different composition than the first phase shifting layer, and an opaque material over the second phase shifting layer;
• etching a first pattern through the first phase shifting layer, second phase shifting layer, and opaque layer;
• the first pattern being a feature pattern;
• the feature pattern having a periphery and being configured to impart a first rotation in phase to wavelength of light passing through the feature pattern;
• etching a second pattern through the opaque layer and the second phase shifting layer, and to the first phase shifting layer;
• the second pattern being a rim;
• the rim being along a portion of the feature pattern periphery but not along an entirety of the feature pattern periphery;
• the rim being configured to impart a second rotation in phase to the wavelength of light when the wavelength passes through the rim;
• the second rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase.

A method of forming a radiation patterning tool, comprising:

• providing a substrate which includes a quartz base, a first phase shifting layer over the quartz base, a second phase shifting layer over the first phase shifting layer and having a different composition than the first phase shifting layer, and an opaque material over the second phase shifting layer;
• etching a first pattern through the first phase shifting layer, second phase shifting layer, and opaque layer, and into the substrate;
• the first pattern being a feature pattern;
• the feature pattern having a periphery and being configured to impart a first rotation in phase to a wavelength of light passing through the feature pattern;
• etching a second pattern through the opaque layer;
• the second pattern being a rim;
• the rim being along a portion of the feature pattern periphery but not along an entirety of the feature pattern periphery;
• the rim being configured to impart a second rotation in phase to the wavelength of light when the wavelength passes through the rim;
• the second rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase.

A method of forming a radiation patterning tool, comprising:

• providing a substrate which includes a quartz base, a first phase shifting layer over the quartz base, a second phase shifting layer over the first phase shifting layer and having a different composition than the first phase shifting layer, and an opaque material over the second phase shifting layer;
• etching a first pattern through the first phase shifting layer, second phase shifting layer, and opaque layer, and into the substrate;
• the first pattern being a first feature pattern;
• the first feature pattern having a periphery and being configured to impart a first rotation in phase to a wavelength of light passing through the feature pattern;
• etching a second pattern through the first phase shifting layer, second phase shifting layer, and opaque layer;
• the second pattern being a second feature pattern;
• the second feature pattern having a periphery and being configured to impart a second rotation in phase to a wavelength of light passing through the feature pattern;
• the second rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase;
• etching a third pattern through the opaque layer;
• the third pattern being a first rim;
• the first rim being along a portion of the first feature pattern periphery but not along an entirety of the first feature pattern periphery;
• the first rim being configured to impart a third rotation in phase to the wavelength of light when the wavelength passes through the first rim;
• the third rotation in phase being from about 170 degrees to about 190 degrees relative to the first rotation in phase;
• and
• etching a fourth pattern through the opaque layer and the second phase shifting layer, and to the first phase shifting layer;
• the fourth pattern being a second rim;
• the second rim being along a portion of the second feature pattern periphery but not along an entirety of the second feature pattern periphery;
• the second rim being configured to impart a fourth rotation in phase to the wavelength of light when the wavelength passes through the second rim;
• the fourth rotation in phase being from about 170 degrees to about 190 degrees relative to the second rotation in phase.