Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Hui Chen, Chi-Hung Kao, Jeng Gong, Kuo--Hsu Huang, Meng-Chi Wu, Jia-Rong Yu
Life of this patent
Estimating the term…
Abstract
Within both a lateral double diffused metal oxide semiconductor (LDMOS) device, and a method for fabrication thereof, there is formed a buried layer of polarity equivalent with a well region within which is formed a drain region. The buried layer is formed laterally aligned with respect to the well region, and separated therefrom by a portion of an epitaxial layer. The lateral double diffused metal oxide semiconductor (LDMOS) device exhibits enhanced electrical performance.
Claims13
A lateral double diffused metal oxide semiconductor device comprising:
- a semiconductor substrate of a first polarity having formed thereupon an epitaxial layer of a second polarity opposite the first polarity;
- a source region of the first polarity separated from a well region of the first polarity by a channel region of the second polarity, the well region having formed therein and further separated from the channel region a drain region of the first polarity, the source region, the channel region, the well region and the drain region being formed laterally sequentially adjoining within the epitaxial layer;
- a gate electrode formed over the channel region;
- and
- a buried layer of the first polarity formed laterally aligned beneath the well region and separated therefrom by a portion of the epitaxial layer.
A method for forming a lateral double diffused metal oxide semiconductor device comprising:
- providing a semiconductor substrate of a first polarity;
- forming upon the semiconductor substrate an epitaxial layer of a second polarity opposite the first polarity;
- forming within the epitaxial layer a source region of the first polarity separated from a well region of the first polarity by a channel region of the second polarity, the well region having formed therein and further separated from the channel region a drain region of the first polarity, the source region, the channel region, the well region and the drain region being formed laterally sequentially adjoining within the epitaxial layer;
- forming over the channel region a gate electrode;
- and
- forming laterally aligned beneath the well region and separated therefrom by a portion of the epitaxial layer a buried layer of the first polarity.
Dependencies are inferred from the claim text.