Self-aligned magnetic clad write line and its method of formation
AssigneeFreescale Semiconductor, Inc.
InventorsRobert E. Jones, Carole C. Barron, Eric D. Luckowski, Bradley M. Melnick
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Abstract
A self-aligned magnetic clad bit line structure (274) for a magnetic memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (264), magnetic cladding sidewalls (262) and a magnetic cladding cap (252). The magnetic cladding sidewalls (262) at least partially surround the conductive material (264) and the magnetic cladding cap (252) is substantially recessed within the trench with respect to the top of the trench.
Claims27
A semiconductor device, comprising:
- a write line which generates a magnetic field upon the application of current, wherein:
- the write line extends within a trench and further includes a conductive write line material and a magnetic cladding material, wherein the magnetic cladding material at least partially surrounds the conductive write line material along sidewalls and a top surface of the conductive write line material, wherein portions of the magnetic cladding material overlying the top surface are substantially recessed with respect to the top of the trench.
A semiconductor device, comprising:
- a magnetic memory element interposed between a digit line and a bit line, wherein:
- the digit line extends in a first direction;
- and
- the bit line extends within a trench in a second direction that is perpendicular to the first direction and further includes a conductive bit line material and a magnetic cladding material, wherein the magnetic cladding material at least partially surrounds the conductive bit line material along sidewalls and a top surface of the conductive bit line material, wherein portions of the magnetic cladding material overlying the top surface are substantially recessed with respect to the top of the trench.
A semiconductor device structure, comprising:
- a dielectric layer;
- a trench opening within the dielectric layer;
- a sidewall magnetic cladding material within the trench opening disposed along sidewalls of the trench opening;
- a conductive material within the trench opening at least partially surrounded by the sidewall magnetic cladding material;
- and
- a capping magnetic cladding material within the trench opening, wherein portions of the capping magnetic cladding material are substantially recessed with respect to a top surface of the dielectric layer.
The semiconductor device of claim 16, wherein the barrier material includes a material selected from a group consisting of Ta, TiW, TiN, and TaN.
A method for forming a semiconductor device comprising:
- forming magnetic memory elements overlying a semiconductor device substrate;
- forming a dielectric layer overlying the magnetic memory elements;
- forming a trench opening within the dielectric layer;
- forming magnetic cladding sidewall spacers on adjacent sidewalls of the trench;
- forming a conductive material within the trench;
- forming a magnetic cladding cap within the trench and overlying the conductive bit line material;
- wherein portions of the magnetic cladding cap are substantially recessed with respect to a top surface of the dielectric layer, and wherein a combination of the conductive bit line material within the trench, the magnetic cladding sidewall spacers and the magnetic cladding cap form a clad bit line.
Dependencies are inferred from the claim text.