Ferroelectric film and semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKeisuke Tanaka, Toru Nasu, Masamichi Azuma
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Abstract
The ferroelectric film of the invention is made from a ferroelectric material represented by a general formula, Bi4−x+yAxTi3O12 or (Bi4−x+yAxTi3O12)z+(DBi2E2O9)1−z, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V; D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pb and La; E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr; and 0≦x≦2, 0≦y≦(4−x)×0.1 and 0.5<z<1.
Claims13
A ferroelectric film made from a ferroelectric material represented by a general formula, Bi4−x+yAxTi3O12, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V;
- and 0≦x≦2 and 0<y≦(4−x)×0.1.
A ferroelectric film made from a ferroelectric material represented by a general formula, (Bi4−x+yAxTi3O12)z+(DBi2E2O9)1−z, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu and V;
- D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pd and La;
- E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr;
- and 0≦x≦2, 0<y≦(4−x)×0.1 and 0.5<z<1.
A ferroelectric film made from a ferroelectric material represented by a general formula, Bi4−x+y−rAxDrTi3−sEsO12, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V;
- D is an element selected from the group consisting of Sr, Ba, Ca, Cd, Pb and La;
- E is an element selected from the group consisting of Ta, Hf, W, Nb, Zr and Cr;
- and 0≦x≦2, 0<y≦(4−x)×0.1, 0<x+r≦2, 0≦r≦0.5 and 0≦s≦0.5.
A semiconductor device comprising:
- a ferroelectric film;
- and
- an electrode provided in contact with at least one face of said ferroelectric film,
- wherein said ferroelectric film is made from a ferroelectric material represented by a general formula, Bi4−x+yAxTi3O12, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V;
- and 0≦x≦2 and 0<y≦(4−x)×0.1.
A semiconductor device comprising:
- a ferroelectric film;
- and
- an electrode provided in contact with at least one face of said ferroelectric film,
- wherein said ferroelectric film is made from a ferroelectric material represented by a general formula, (Bi4−x+yAxTi3O12)z+(DBi2E2O9)1−z, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V;
- D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pd and La;
- E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr;
- and 0≦x≦2, 0<y≦(4−x)×0.1 and 0.5<z<1.
A semiconductor device comprising:
- a ferroelectric film;
- and
- an electrode provided in contact with at least one face of said ferroelectric film,
- wherein said ferroelectric film is made from a ferroelectric material represented by a general formula, Bi4−x+y−rAxDrTi3−sEsO12, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V;
- D is an element selected from the group consisting of Sr, Ba, Ca, Cd, Pb and La;
- E is an element selected from the group consisting of Ta, Hf, W, Nb, Zr and Cr;
- and 0≦x≦2, 0<y≦(4−x)×0.1, 0<x+r≦2, 0≦r≦0.5 and 0≦s≦0.5.
Dependencies are inferred from the claim text.