Semiconductor device and method of fabricating semiconductor device

A method of fabricating a semiconductor device comprising the steps of:

• forming multiplayer films including a first conductivity type impurity on a substrate;
• forming an operating region by processing a mesa-isolation into an island structure by etching the multiplayer films utilizing a pattern formed on the multiplayer films as a mask;
• forming, at a side wall of said operation region, an impurity diffusion layer including a second conductivity type impurity which is different from said first conductivity type impurity doped into the multiplayer films;
• and
• forming an electrode on said operating region from an upper surface to a side wall after removing said pattern.

A method of fabricating a semiconductor device comprising the steps of:

• forming multiplayer films including a first conductivity type impurity on a substrate;
• forming an operating region by processing a mesa-isolation into an island structure by etching the multiplayer films utilizing a pattern formed on the multiplayer films as a mask;
• forming an isolation film on upper side of the substrate as to cover the operating region after removing said pattern;
• forming an electrode aperture in said insulating film so as to extend from the upper surface to the side wall of said operating region;
• forming an impurity diffusion layer by applying a second conductivity type impurity, which is different from the first conductivity type impurity doped into said multilayer film, to an exposed surface layer of said operating region through said electrode aperture;
• and
• forming an electrode extending from the upper surface to the side wall of said operating region so that said electrode embeds in said electrode aperture.