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US 2003/0151060 A1Published application
Semiconductor device having a fuse and method of forming thereof
AssigneeFreescale Semiconductor, Inc.
InventorsThomas S. Kobayashi, Stephen G. Sheck, Scott K. Pozder
Life of this patent
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Abstract
A fuse (43) is formed overlying a passivation layer (35) and under a packaging material (55, 70). In one embodiment, a fuse (43) is blown before the packaging material (55, 70) is formed. In some embodiments, the fuse (43) may be formed of metal (47), a metal nitride (42) or a combination thereof.
Claims20
A semiconductor device, comprising:
- a substrate having circuitry formed therein;
- a passivation layer formed overlying at least a portion of the substrate;
- and
- a fuse, which may be selectively open-circuited, formed overlying the passivation layer.
1 more element
A semiconductor device, comprising:
- a substrate having a first circuit formed therein and a second circuit formed therein, wherein the first circuit has a first contact area and the second circuit has a second contact area;
- a passivation layer formed overlying at least a portion of the substrate;
- and
- a fuse, which may be selectively open-circuited, formed overlying the passivation layer, the fuse having a third contact area which is electrically coupled to the first contact area of the first circuit, and the fuse having a fourth contact area which is electrically coupled to the second contact area of the second circuit,
- wherein the first contact area of the first circuit and the second contact area of the second circuit are no longer electrically connected if the fuse is open-circuited.
2 more elements
A method for forming a semiconductor device having a fuse, comprising:
- providing a substrate;
- forming a passivation layer overlying at least a portion of the substrate;
- and
- forming the fuse overlying the passivation layer.
1 more element
Dependencies are inferred from the claim text.