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US 2003/0148607 A1Published application
Metallic film forming method and semiconductor device manufacturing method
AssigneeSony Corporation
InventorHiroshi Yamada
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AssigneeSony Corporation
InventorHiroshi Yamada
Estimating the term…
It is contrived to solve the problem of deformation of material due to differences in coefficient of thermal expansion, hardness and the like between a wiring metal and an insulating film surrounding the wiring metal, the problem of generation of voids in the wiring, and the like problems, and to improve initial characteristics and reliability of operation on a long-term basis. A method of producing a semiconductor system comprises the steps of: heating a metallic film to a temperature (B) of the stress yield point of the metal ±50° C. and holding the metallic film at that temperature for a predetermined period of time, and heating the metallic film to a temperature (C) which is not lower than the holding temperature and at which growth of crystal grain diameter occurs to thereby cause growth of crystal grain diameter of the metallic film.
A method of forming a metallic film, comprising the steps of:
A method of producing a semiconductor system, comprising the steps of:
A method of producing a semiconductor system, comprising a step of heat treating a structural body comprising a first material portion which is softened when being heated and a second material portion comprised of a metal based material and formed in contact with said first material portion, wherein said heat treatment is conducted by heating to a temperature lower than the softening point of said first material portion to thereby cause crystal growth of said second material portion with stress yield.
Dependencies are inferred from the claim text.