Method to modify 0.25 mum 1T-RAM by extra resist protect oxide (RPO) blocking

A method to fabricate a 1T-RAM device, comprising the steps of:

• providing a semiconductor substrate having an access transistor area and an exposed bottom plate within a capacitor area proximate the access transistor area;
• forming a gate with an underlying gate dielectric layer within the access transistor area;
• the gate and underlying gate dielectric layer having sidewall spacers formed over their respective exposed side walls;
• forming a top plate with an underlying capacitor layer over the bottom plate within the capacitor area;
• the top plate and underlying capacitor layer having sidewall spacers formed over their respective exposed side walls;
• forming a patterned resist protect oxide (RPO) layer over at least the drain of the structure not to be silicided;
• forming a metal layer over the structure and over RPO layer;
• and
• rapid thermal annealing the structure to form metal silicide portions over the structure not protected by the RPO layer.

A method to fabricate a 1T-RAM device, comprising the steps of:

• providing a semiconductor substrate having an access transistor area and an exposed bottom plate within a capacitor area proximate the access transistor area;
• forming a gate with an underlying gate dielectric layer within the access transistor area;
• the gate and underlying gate dielectric layer having sidewall spacers formed over their respective exposed side walls;
• the gate being comprised of polysilicon;
• the gate dielectric layer being comprised of gate oxide;
• forming a top plate with an underlying capacitor layer over the bottom plate within the capacitor area;
• the top plate and underlying capacitor layer having sidewall spacers formed over their respective exposed side walls;
• the top plate being comprised of polysilicon;
• the capacitor layer being comprised of gate oxide;
• forming a patterned resist protect oxide (RPO) layer over at least the drain of the structure not to be silicided;
• and
• forming metal suicide portions over the structure not protected by the RPO layer.