Substrate-triggered bipolar junction transistor and ESD protection circuit

An ESD protection device formed on a substrate of a first type, comprising:

• a first region of a second type formed in the substrate;
• a second region of the second type formed in the substrate;
• a substrate region constituted by the substrate and located between the first region and the second region;
• a third region of the first type formed in the substrate and spatially separated from the first region;
• a first shallow trench isolation structure formed between the first region and third region;
• and
• a fourth region of the first type formed in the substrate and spatially separated from the second region, the first region and the second region being located between the third region and fourth region.

A method of forming a lateral bipolar junction transistor on a substrate of a first type, comprising the steps of:

• forming a first shallow trench isolation structure on the substrate of the first type using an oxide definition photolithographic process;
• forming a first region and a second region of a second type in the substrate using a second-type implantation photolithographic process, the first region and the second region being spatially separated by a substrate region constituted by the substrate;
• and
• forming a third region and a fourth region of the first type in the substrate and spatially separated from the first region and the second region, respectively, in a first-type implantation photolithographic process, the first shallow trench isolation structure being formed between the first region and the third region.