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AssigneeMitsubishi Denki Kabushiki Kaisha and Ryoden Semiconductor System Engineering Corporation
InventorsShinya Nakatani, Heiji Kobayashi
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An uppermost interlayer isolation film is provided on a semiconductor substrate. An uppermost wire is provided on the uppermost interlayer isolation film. A silicon oxide film is provided to cover the upper surface and the side wall of the uppermost wire. A nitride film is provided on the uppermost interlayer isolation film to cover the uppermost wire through the silicon oxide film. A polyimide film is provided on the nitride film. A portion of the uppermost interlayer isolation film other than a portion located under the uppermost wire is downwardly scooped. The nitride film covers the scooped portion of the uppermost interlayer isolation film. According to the present invention, a semiconductor device improved to be capable of improving coverage of a silicon nitride passivation film is obtained.
A semiconductor device comprising:
A method of fabricating a semiconductor device, comprising steps of:
Dependencies are inferred from the claim text.