Local interconnect for integrated circuit
AssigneeLSI Logic Corporation
InventorsJeffrey F. Hanson, Derryl D. J. Allman
Life of this patent
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AssigneeLSI Logic Corporation
InventorsJeffrey F. Hanson, Derryl D. J. Allman
Estimating the term…
An integrated circuit having a gate region, a source drain region, and an electrically nonconductive spacer separating the gate region and the source drain region. A local interconnect electrically connects the gate region to the source drain region across the electrically nonconductive spacer. The local interconnect is formed of a semiconducting material reacted with a metal. The local interconnect may be formed by implanting a precursor species into the electrically nonconductive spacer. A metal layer is deposited over at least the electrically nonconductive spacer, and the integrated circuit is heated to form an electrically conductive local interconnect from the metal layer and the precursor species implanted in the electrically nonconductive spacer.
In an integrated circuit having a gate region, a source drain region, and an electrically nonconductive spacer separating the gate region and the source drain region, the improvement comprising a local interconnect electrically connecting the gate region to the source drain region across the electrically nonconductive spacer, where the local interconnect is formed of a semiconducting material reacted with a metal.
A method of forming a local interconnect between a gate region and a source drain region of an integrated circuit, where the gate region and the source drain region are separated by an electrically nonconductive spacer, the method comprising the steps of:
A method of forming a local interconnect between a gate region and a source drain region of an integrated circuit, where the gate region and the source drain region are separated by an electrically nonconductive spacer, the method comprising the steps of:
A method of forming a local interconnect between a gate region and a source drain region of an integrated circuit, where the gate region and the source drain region are separated by an electrically nonconductive spacer, the method comprising the steps of:
A method of forming a local interconnect between a gate region and a source drain region of an integrated circuit, where the gate region and the source drain region are separated by an electrically nonconductive spacer, the method comprising the steps of:
Dependencies are inferred from the claim text.