Booster circuit for non-volatile semiconductor memory device

A booster circuit applied for a non-volatile semiconductor memory device, which comprises a memory cell array of multiple non-volatile memory elements and has multiple operation modes including a plurality of active modes to permit an access to one of the multiple non-volatile memory elements and a standby mode to stand ready for an access to one of the multiple non-volatile memory elements, the booster circuit boosting a power source voltage and outputting a boosted voltage according to each of the operation modes,

• the booster circuit comprising:
• a first booster module that is driven in each of the active modes to boost the power source voltage to a specified voltage according to the active mode and output the specified voltage as the boosted voltage;
• a second booster module that has a smaller current capacity supplied to the memory cell array than that of the first booster module, and is driven in the standby mode to boost the power source voltage to a standby voltage according to the standby mode and outputs the standby voltage as the boosted voltage;
• and
• a drive control module that controls actuation of the first booster module and the second booster module,
• at a power supply ON time or at a reset time of the non-volatile semiconductor memory device, the drive control module actuating the first booster module to make the boosted voltage rise to the standby voltage even when the operation mode is the standby mode.